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| RFP2N12L Data Sheet April 1999 File Number 2874.2 2A, 120V, 1.750 Ohm, Logic Level, N-Channel Power MOSFET The RFP2N12L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V - 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09528. Features * 2A, 120V * rDS(ON) = 1.750 * Design Optimized for 5V Gate Drives * Can be Driven Directly from QMOS, NMOS, TTL Circuits * Compatible with Automotive Drive Requirements * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance Ordering Information PART NUMBER RFP2N12L PACKAGE TO-220AB BRAND RFP2N12L * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" NOTE: When ordering, include the entire part number. Symbol D G S Packaging JEDEL TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 6-252 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFP2N12L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP2N12L Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage RGS = 20K (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 120 120 10 2 5 25 0.2 -55 to 150 300 260 UNITS V V V A A W W/ oC oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0 VGS = VDS, ID = 250A (Figure 8) VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC MIN 120 1 VGS = 0V, VDS = 25V, f = 1MHz (Figure 9) TYP 10 10 24 20 MAX 2 1 25 100 3.5 1.750 25 45 45 25 200 80 35 5 UNITS V V A A nA V ns ns ns ns pF pF pF oC/W Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Voltage (Note 2) Drain to Source On Resistance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case IGSS VDS(ON) rDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 10V, VDS = 0V ID = 2A, VGS = 5V ID = 2A, VGS = 5V (Figure 6, 7) ID 2A, VDD = 75V, RG = 6.25, RL = 75, VGS = 5V (Figures 10, 11, 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulsed: pulse duration = 300s max, duty cycle = 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr ISD = 2A ISD = 2A, dlSD/dt = 50A/s TEST CONDITIONS MIN TYP 150 MAX 1.4 UNITS V ns 6-253 RFP2N12L Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER Unless Otherwise Specified 2.5 0.8 0.6 0.4 0.2 0 0 25 50 75 100 TC, CASE TEMPERATURE (oC) 125 150 ID, DRAIN CURRENT (A) 1.0 2.0 1.5 1.0 0.5 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 OPERATION IN THIS AREA LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) 1 4 TJ = MAX RATED TC = 25oC ID, DRAIN CURRENT (A) 3 VGS = 10V TC = 25oC PULSE DURATION = 80s VGS = 5V VGS = 4V 2 VGS = 3V 1 VGS = 2V 0.10 0.01 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 1000 0 1 2 3 4 5 6 7 8 VDS, DRAIN TO SOURCE VOLTAGE (V) 9 10 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) 6 5 4 3 125oC 2 125oC 1 -40oC 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 5 0.5 0 rDS(ON), DRAIN TO SOURCE ON RESISTANCE () VDS = 15V PULSE DURATION = 80s -40oC 25oC 4 VGS = 5V PULSE DURATION = 80s 125oC 3 25oC 2 1 -40oC 1 2 ID, DRAIN CURRENT (A) 3 4 FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 6-254 RFP2N12L Typical Performance Curves ID = 250A VGS = 5V NORMALIZED GATE THRESHOLD VOLTAGE Unless Otherwise Specified (Continued) 1.5 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2.0 VGS = VDS ID = 250A 1.5 1.0 1.0 0.5 0.5 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 50 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 150 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 240 200 C, CAPACITANCE (pF) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 150 RL = 75 IG(REF) = 0.095mA VGS = 10V GATE SOURCE VOLTAGE VDD = BVDSS 4 37.5 0.75BVDSS 0.50BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE I 20 G(REF) IG(ACT) t, TIME (s) I 80 G(REF) IG(ACT) 10 VGS, GATE TO SOURCE VOLTAGE (V) 8 112.5 160 120 80 CISS 6 75 VDD = BVDSS COSS 2 40 CRSS 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 0 0 NOTE: Refer to Intersil Applications Notes AN7254 and AN7260 FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 6-255 RFP2N12L All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 6-256 |
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